RESEARCH FIELD

Nanoelectronics

Nanoelectronics develops electronic devices and systems with functional components at the nanometre scale, pushing semiconductor technology beyond the physical limits of conventional silicon CMOS as transistor gate lengths approach a few nanometres. Research spans new transistor architectures including FinFET, gate-all-around nanosheets, and 3D stacked transistors; beyond-silicon channel materials such as III-V compound semiconductors and 2D materials including MoS2 and graphene; novel memory devices including resistive RAM and spin-transfer torque MRAM; and neuromorphic circuits that emulate synaptic plasticity for energy-efficient AI hardware. Extreme ultraviolet lithography enables patterning features below 10 nm for high-volume manufacturing. Quantum-effect devices including single-electron transistors and quantum dots are the basis for quantum computing hardware. Material deposition with atomic layer precision and characterisation by aberration-corrected TEM and STM are standard research tools. Nanoelectronics is funded by semiconductor companies, DARPA, the European Chips Act, and national research programmes on post-silicon computing.