Wolfspeed

Wolfspeed (formerly Cree) is a Durham, North Carolina-based company that is the world leader in the design, manufacture, and supply of silicon carbide (SiC) power devices and wafers, serving researchers and manufacturers developing next-generation power electronics for electric vehicles, renewable energy systems, and industrial applications. Wolfspeed's 4H-SiC epitaxial wafers in 150 mm and 200 mm diameters are the reference substrates for academic and industrial research into SiC MOSFETs, Schottky barrier diodes, bipolar junction transistors, and JFETs. SiC's wide bandgap (3.26 eV), high critical electric field, high thermal conductivity, and high saturation electron velocity make it far superior to silicon for high-voltage, high-temperature, and high-frequency power switching applications. Wolfspeed supplies both raw SiC substrates for researcher-grown epitaxial layers and epi-ready wafers with precisely controlled n-type and p-type doping profiles. Their Wolfspeed Z-FET and C3D SiC Schottky diode product families are standard test devices used by power electronics researchers characterizing converter topologies and loss mechanisms. The company also develops gallium nitride on silicon carbide (GaN-on-SiC) RF power transistors for radar, satellite communications, and 5G base station research. Wolfspeed's materials science publications and collaborative research programs with universities in the US and Europe reflect their position as both a materials supplier and a research organization advancing the fundamental understanding of SiC defects, dopant behavior, and device physics.